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PZT2907AT3G

Part No PZT2907AT3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 0.6A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 1.6V @ 50mA, 500mA
Collector Cut-off Current(Max) 10nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 150mA, 10V
Maximum Power Dissipation 1.5W
Frequency - Transition 200MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 096402-PZT2907AT3G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PZT2907AT3G CAD Model

Description

ON Semiconductor PZT2907AT3G PNP Transistor

The PZT2907AT3G is a high-quality PNP bipolar junction transistor (BJT) from ON Semiconductor, a leading provider of semiconductor solutions. This transistor is designed for general-purpose amplifier and switching applications, offering a robust performance for a wide range of electronic circuits.

Key Features:

  • Type: PNP
  • Package: SOT-223 surface mount
  • Collector-Emitter Voltage (VCEO): 60V
  • Collector Current (IC): Up to 1A
  • Power Dissipation (Pd): 1.5W
  • DC Current Gain (hFE): 100 to 300 at 0.1A
  • Transition Frequency (fT): 100MHz
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

The PZT2907AT3G transistor is housed in a compact SOT-223 package, making it suitable for automated assembly processes and space-constrained applications. Its surface-mount design allows for efficient heat dissipation and a smaller footprint on the printed circuit board (PCB).

With a collector-emitter voltage of 60V and a collector current capacity of up to 1A, this transistor can handle moderate power levels while maintaining stable operation. The power dissipation is rated at 1.5W, which contributes to its reliability in continuous or pulsed operation modes.

The device features a DC current gain (hFE) of 100 to 300 at 0.1A, ensuring amplification efficiency for a variety of signals. Additionally, the transition frequency of 100MHz makes the PZT2907AT3G suitable for applications requiring high-speed switching.

ON Semiconductor's PZT2907AT3G operates over a wide temperature range, from -55°C to +150°C, making it reliable in diverse environmental conditions. This temperature range, combined with the robust construction, ensures that the transistor can endure the stresses of both industrial and consumer applications.

Whether you're designing an audio amplifier, a power management circuit, or a switch for your electronic device, the PZT2907AT3G from ON Semiconductor provides a dependable solution with its excellent performance characteristics and proven reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2082 $51.0090
590+ $0.1709 $100.8310
910+ $0.1655 $150.6050
1,250+ $0.1602 $200.2500
1,615+ $0.1549 $250.1635
2,165+ $0.1388 $300.5020
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 737 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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