The PZT3904T1G is a high-performance NPN bipolar (BJT) transistor from ON Semiconductor, designed for a wide range of applications requiring efficient amplification and switching. This versatile transistor is ideal for use in general-purpose amplification and switching applications, and it is particularly well-suited for mobile and power-sensitive designs due to its low power consumption and compact SOT-223 surface-mount package.
Key Features:
- Transistor Type: NPN
- Collector-Emitter Voltage (VCEO): 40V
- Collector-Base Voltage (VCBO): 60V
- Emitter-Base Voltage (VEBO): 6V
- Collector Current - Continuous (IC): 200mA
- Power Dissipation (Pd): 1.5W
- DC Current Gain (hFE): 100 to 300 at 10mA, 1V
- Operating and Storage Junction Temperature Range: -55°C to +150°C
- Package / Case: SOT-223
Applications:
- Linear amplification and switching
- Signal processing
- Power management
- Consumer electronics
- Telecommunications
- Computing devices
The PZT3904T1G is manufactured using ON Semiconductor's innovative processes, ensuring high reliability and performance. The device is characterized by its high current gain bandwidth product and low saturation voltage, which make it an excellent choice for audio amplifiers, radio frequency circuits, and other high-frequency applications. Its robust design allows for stable operation over a wide range of temperatures, making it a reliable component for both commercial and industrial environments.
ON Semiconductor's commitment to environmental sustainability is reflected in the PZT3904T1G's "Green" status. The device is lead-free, halogen-free, and RoHS compliant, minimizing the environmental impact and meeting the requirements for eco-friendly electronic product designs.
Overall, the PZT3904T1G from ON Semiconductor offers designers a powerful, efficient, and versatile transistor solution that can be easily integrated into a multitude of electronic circuits and applications.