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PZT3906T1G

Part No PZT3906T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 0.2A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 400mV @ 5mA, 50mA
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 1.5W
Frequency - Transition 250MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 1090866-PZT3906T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PZT3906T1G CAD Model

Description

The PZT3906T1G is a high-quality PNP bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leading provider in the semiconductor industry. This transistor is part of the PZT series, known for their reliability and efficiency in various electronic applications. The PZT3906T1G is particularly suitable for amplification and switching applications, thanks to its excellent hFE linearity and low saturation voltage.

This PNP transistor comes in a small SOT-223 surface-mount package, which is ideal for space-constrained applications. The compact footprint ensures that the device can be integrated into modern electronic circuits without compromising performance. The PZT3906T1G can handle a collector current of up to -500 mA and features a collector-emitter voltage (VCEO) of -40 V, making it robust for handling moderate power levels in electronic circuits.

The PZT3906T1G offers a transition frequency (fT) of 200 MHz, which allows it to be used in high-speed switching applications. This characteristic is essential for signal processing and communication circuits where rapid switching is crucial. Additionally, its low collector-emitter saturation voltage (VCE(sat)) ensures lower power dissipation during operation, contributing to energy efficiency in the end application.

ON Semiconductor has designed the PZT3906T1G with a focus on minimizing on-state resistance and maximizing load current capability, which makes it an excellent choice for load drivers and power management tasks. The device also features a high gain-bandwidth product, which is beneficial for amplification purposes in audio, radio frequency (RF), and other analog applications.

In summary, the PZT3906T1G from ON Semiconductor is a versatile PNP transistor that offers a blend of performance, power efficiency, and compact size. Its robust electrical characteristics and reliability make it a preferred choice for designers and engineers looking to develop sophisticated electronic systems.

For detailed specifications and application notes, engineers and designers are encouraged to consult the datasheet provided by ON Semiconductor, which offers comprehensive information to ensure optimal use of the PZT3906T1G in their projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.7314 $52.3884
14+ $7.1642 $100.2988
22+ $6.9403 $152.6866
30+ $6.7165 $201.4950
39+ $6.4926 $253.2114
52+ $5.8209 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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