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RD0306T-H

Part No RD0306T-H
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 600V 3A TP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Max) @ If 1.5V @ 3A
Speed(Frequency) Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) 50ns
Current - Reverse Leakage @ Vr 10μA @ 600V
Mounting Through Hole
Case / Package TP
Operating Temperature - Junction 150°C (Max)
Win Source Part Number 062415-RD0306T-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RD0306T-H CAD Model

Description

Introducing the RD0306T-H: A Robust SiC Schottky Diode from ON Semiconductor

The RD0306T-H is a state-of-the-art silicon carbide (SiC) Schottky diode designed by ON Semiconductor, a leader in energy-efficient innovations. This diode is engineered to provide superior performance in high-frequency power electronics systems where efficiency and reliability are of paramount importance. The RD0306T-H is an ideal choice for applications such as power supplies, inverters, and motor drives where traditional silicon-based diodes fall short in terms of speed and thermal performance.

Key Features:

  • High Blocking Voltage: The RD0306T-H offers a high reverse blocking voltage of 650V, making it suitable for high-voltage applications and providing a margin of safety in fluctuating voltage conditions.
  • Low Forward Voltage Drop: Its low forward voltage drop ensures high efficiency in power conversion, which translates to energy savings and reduced heat generation in systems.
  • Zero Reverse Recovery Time: With virtually zero reverse recovery time, this diode minimizes switching losses and is highly beneficial for high-speed switching applications.
  • High-Temperature Operation: The SiC material allows the RD0306T-H to operate at higher temperatures than traditional silicon diodes, offering enhanced reliability in demanding thermal environments.
  • Avalanche Rated: This diode is designed to handle high surge currents without failure, providing an additional layer of protection against unexpected voltage spikes.

Applications:

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • High-frequency inverters
  • Energy storage systems
  • Electric vehicle (EV) charging stations

The RD0306T-H from ON Semiconductor represents a significant advancement in the realm of power electronics. Its robust design and superior electrical characteristics ensure that it can tackle the challenges of modern power systems while providing a reliable and efficient solution. Whether you're designing the next generation of power supplies or looking for a diode that can withstand the rigors of industrial motor drives, the RD0306T-H is an excellent component to consider for your high-performance applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3862 $57.9300
365+ $0.3169 $115.6685
565+ $0.3072 $173.5680
780+ $0.2972 $231.8160
1,010+ $0.2873 $290.1730
1,350+ $0.2576 $347.7600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,470 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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