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SBC848BLT1G

Part No SBC848BLT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 30V 100MA SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features Bipolar (BJT) Transistor NPN 30 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Case / Package SOT-23-3 (TO-236)
Family Name SBC848
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number SBC848BLT1G-ND, SBC848BLT1GOSDKR, SBC848BLT1GOSTR, SBC848BLT1GOSCT
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 893635-SBC848BLT1G
Ultra Librarian 3D Model Ultra Librarian SBC848BLT1G CAD Model

Description

ON Semiconductor SBC848BLT1G Bipolar Transistor

The SBC848BLT1G is a high-performance NPN bipolar junction transistor (BJT) developed by ON Semiconductor, a leader in energy-efficient innovations. This semiconductor device is designed for general-purpose amplifier and switching applications, providing a perfect balance between efficiency and reliability for a wide range of electronic circuits.

Key Features

  • Transistor Polarity: NPN - This indicates that the transistor is designed to control the flow of electrons and is primarily used for amplifying or switching electronic signals.
  • Collector-Emitter Voltage (Vceo): 30V - This is the maximum voltage that can be safely applied between the collector and emitter terminals when the base is open.
  • Collector Current (Ic): 100mA - The maximum current that can flow through the collector of the transistor, which is suitable for a wide range of low-power applications.
  • DC Current Gain (hFE): 200 to 600 - This gain factor measures the transistor's ability to amplify the input signal, making it highly effective for various amplification needs.
  • Power Dissipation (Pd): 225mW - The amount of power that the transistor can dissipate without exceeding its maximum operating temperature, ensuring stable performance over time.
  • Operating Temperature Range: -55°C to +150°C - The device is designed to operate reliably within a broad range of temperatures, making it suitable for harsh environments.
  • Package / Case: SOT-23-3 - A compact, surface-mount package that allows for efficient use of PCB space and is convenient for automated assembly processes.

Applications

The SBC848BLT1G is versatile and can be used in a variety of electronic circuits, including but not limited to:

  • Audio amplifiers
  • Signal processing
  • Switching circuits
  • Voltage regulation
  • Power management systems

ON Semiconductor ensures that the SBC848BLT1G meets high-quality standards, with robust construction and consistent performance. Whether you're designing consumer electronics, industrial controls, or automotive systems, the SBC848BLT1G offers the reliability and efficiency needed for your applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,120+ $0.0273 $57.8760
4,525+ $0.0256 $115.8400
7,010+ $0.0247 $173.1470
10,105+ $0.0229 $231.4045
13,090+ $0.0221 $289.2890
16,395+ $0.0212 $347.5740
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,080 pieces
MOQ: 2120 pcs
Order Increment : 1 pcs
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