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SBC856BWT1G

Part No SBC856BWT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 65V 0.1A SOT-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 65V
Max Vce (sat) 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 220 @ 2mA, 5V
Maximum Power Dissipation 150mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Win Source Part Number 064044-SBC856BWT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SBC856BWT1G CAD Model

Description

ON Semiconductor SBC856BWT1G PNP Transistor

The SBC856BWT1G by ON Semiconductor is a high-performance PNP bipolar transistor that offers a blend of low voltage operation and high current capability. This device is designed for use in a wide range of electronic applications, particularly where space is at a premium and energy efficiency is a concern.

With a collector-emitter voltage (VCEO) of -65V and a collector current (IC) of -100mA, the SBC856BWT1G is suitable for moderate power switching and amplification tasks. The transistor features a low collector-emitter saturation voltage, which helps to minimize power loss and improve overall system efficiency when the transistor is in the on-state.

The SBC856BWT1G comes in a compact SOT-323 package, which is ideal for space-constrained applications. The small footprint of this surface-mount package allows for high-density PCB layouts, making it an excellent choice for portable electronic devices, such as smartphones, tablets, and wearables, where space is at a premium.

Additionally, the SBC856BWT1G boasts a high current gain bandwidth product (fT) of 100MHz, which provides excellent frequency response. This characteristic makes it suitable for use in high-speed switching applications and in the amplification of high-frequency signals.

The device also features low noise figures, making it an excellent choice for audio amplification and sensitive signal processing applications where maintaining signal integrity is crucial. Its PNP configuration allows for easy implementation into complementary or push-pull amplifier designs, offering designers flexibility in their circuit topologies.

ON Semiconductor's commitment to quality ensures that the SBC856BWT1G meets stringent reliability standards. It is designed to operate over a wide temperature range, maintaining stable performance under varying environmental conditions. This reliability, combined with the transistor's electrical characteristics, makes it a versatile component for designing energy-efficient and compact electronic systems.

In summary, the SBC856BWT1G from ON Semiconductor is a versatile PNP transistor that offers a balance of power handling, efficiency, and high-frequency performance, all packed into a tiny, surface-mount package suitable for a wide array of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3538 $51.3010
305+ $0.3314 $101.0770
470+ $0.3202 $150.4940
675+ $0.2978 $201.0150
875+ $0.2866 $250.7750
1,090+ $0.2754 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 55,140 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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