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SDTC124EET1G

Part No SDTC124EET1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr onsemi
Package Tape & Reel (TR)
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 200 mW
Mounting SMD (SMT)
Package / Case SC-75, SOT-416
Supplier Device Package SC-75, SOT-416
Base Product Number SDTC124
Other Names 2156-SDTC124EET1G-OS,ONSONSSDTC124EET1G
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278678-SDTC124EET1G
Ultra Librarian 3D Model Ultra Librarian SDTC124EET1G CAD Model

Description

The ON Semiconductor SDTC124EET1G is a high-performance NPN silicon epitaxial planar transistor designed to meet the rigorous demands of modern electronic circuits. This versatile bipolar junction transistor (BJT) offers a perfect balance of efficiency and reliability, making it an ideal choice for a wide range of applications in the industrial, automotive, and consumer electronics sectors.

Key Features

  • Device Type: NPN Bipolar Transistor
  • Package: SOT-523 (SC-79) surface mount package, which is not only space-saving but also facilitates efficient thermal management and quick assembly on printed circuit boards.
  • Collector-Emitter Voltage (Vceo): This transistor can withstand voltages up to 50V between the collector and emitter terminals, providing a good margin for many electronic designs.
  • Collector Current (Ic): It supports a continuous collector current up to 100 mA, suitable for signal processing and amplification tasks.
  • DC Current Gain (hFE): With a high DC current gain, this component ensures excellent amplification characteristics for low-level signals.
  • Power Dissipation: The device can dissipate up to 150 mW of power, enabling it to handle moderate power levels in compact circuit designs.
  • Operating Temperature Range: It is designed to operate over a wide temperature range from -55°C to +150°C, ensuring stable performance under varying environmental conditions.
  • RoHS Compliant: The SDTC124EET1G is in compliance with the RoHS directive, making it an environmentally friendly choice for your electronic projects.

Applications

The ON Semiconductor SDTC124EET1G is suitable for a plethora of applications, including but not limited to:

  • Signal amplification and processing
  • Switching circuits
  • Linear amplification stages
  • Audio amplifiers
  • Driver stages in hi-fi systems and televisions
  • Control systems
  • Power management solutions

In conclusion, the ON Semiconductor SDTC124EET1G NPN transistor is a robust and efficient component that offers designers the flexibility and performance needed for today's sophisticated electronic designs. Its compact form factor and high reliability make it an excellent choice for both prototyping and mass production.

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