ON Semiconductor SFT1202-TL-E Product Overview

The SFT1202-TL-E from ON Semiconductor is a high-performance, N-channel Trench MOSFET designed to deliver efficiency and power density in a wide range of applications. This MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, which are known for their reliability and innovative technology.

Key Features

• Low On-Resistance: The SFT1202-TL-E features a low on-resistance, which minimizes conduction losses and enhances the overall efficiency of the system in which it is used.
• High-Speed Switching: With its fast switching capabilities, the device is suitable for high-frequency applications, reducing switching losses and improving performance.
• Low Gate Charge: A low gate charge ensures that less energy is required to turn the MOSFET on and off, contributing to the energy-saving characteristics of the component.
• Small Package: The SFT1202-TL-E comes in a compact package, making it an ideal choice for space-constrained applications without compromising power handling capabilities.

Applications

The versatility of the SFT1202-TL-E allows it to be used in a variety of applications, including but not limited to:

• Power Management Systems
• DC/DC Converters
• Motor Drives
• Computing and Server Power Supplies
• Telecom Infrastructure

Product Specifications

The SFT1202-TL-E boasts impressive specifications that make it a robust choice for power switching applications:

• Voltage Rating (V<sub>DS): The device can handle a drain-source voltage of up to 100V, providing ample headroom for various circuit designs.
• Current Rating (I<sub>D): It is capable of conducting a continuous drain current of up to 12A, ensuring it can support high current applications.
• Power Dissipation (P<sub>D): With a power dissipation of 48W, the SFT1202-TL-E can manage significant power levels while maintaining operational integrity.

ON Semiconductor's SFT1202-TL-E is a testament to the company's commitment to providing components that push the boundaries of efficiency and compactness. With its robust design and superior electrical characteristics, this MOSFET is an excellent choice for designers looking to optimize their power management solutions.