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SGH30N60RUFTU

Part No SGH30N60RUFTU
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 48 A
Current - Collector Pulsed (Icm) 90 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 30A
Power - Max 235 W
Switching Energy 919µJ (on), 814µJ (off)
Input Type Standard
Gate Charge 85 nC
Td (on/off) @ 25°C 30ns/54ns
Test Condition 300V, 30A, 7Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3PN
Base Product Number SGH30
Standard Package 450
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277407-SGH30N60RUFTU
Ultra Librarian 3D Model Ultra Librarian SGH30N60RUFTU CAD Model

Description

ON Semiconductor SGH30N60RUFTU IGBT Overview

The SGH30N60RUFTU is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor, a leader in innovative energy-efficient power and signal management solutions. This high-performance IGBT is designed to offer a superior combination of high efficiency, fast switching, and robust thermal performance, making it an ideal choice for a wide range of power applications.

Key Features

  • Voltage Rating: The device is rated for a collector-to-emitter voltage of 600V, providing a wide safety margin for industrial-level voltages.
  • Current Handling: With a continuous collector current rating of 60A at 25°C, the SGH30N60RUFTU can handle significant power levels, suitable for demanding applications.
  • High-Speed Switching: It offers fast switching capabilities, which reduces energy losses during operation and improves overall efficiency.
  • Low Saturation Voltage: The low on-state collector-to-emitter saturation voltage minimizes conduction losses and enhances performance in high-power applications.
  • Co-Packaged Free Wheeling Diode: The IGBT comes with a co-packaged fast recovery diode, which provides additional protection against reverse voltage transients and improves the efficiency of the switching circuit.

Applications

The SGH30N60RUFTU is versatile and can be used in a variety of applications, including:

  • Motor drives and inverters
  • Power supplies
  • Renewable energy systems such as solar inverters and wind turbines
  • Uninterruptible power supplies (UPS)
  • Induction heating and welding equipment

Reliability and Durability

ON Semiconductor has engineered the SGH30N60RUFTU to meet the rigorous demands of industrial and commercial power systems. The device is encapsulated in a robust TO-3P package, which ensures excellent thermal performance and long-term reliability. Additionally, it is qualified to industrial standards, ensuring that it can withstand the stresses of high-power and high-temperature operation.

In summary, the SGH30N60RUFTU IGBT from ON Semiconductor is a high-quality component that offers efficient, reliable, and fast switching for a broad array of power applications. Its robust design and advanced features make it a top choice for engineers looking to optimize their power systems for performance and durability.

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