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SMMBTA56WT3G

Part No SMMBTA56WT3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Tape & Reel (TR)
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V
Power - Max 150 mW
Frequency - Transition 50MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
Base Product Number SMMBTA56
Standard Package 10,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278641-SMMBTA56WT3G
Ultra Librarian 3D Model Ultra Librarian SMMBTA56WT3G CAD Model

Description

The SMMBTA56WT3G is a high-performance PNP bipolar junction transistor (BJT) from ON Semiconductor, a leading provider in the electronic components industry. This semiconductor device is designed for general-purpose amplifier and switching applications, offering a blend of reliability and efficiency in a compact SOT-323 package.

Key Features:

  • Transistor Polarity: PNP - This means the transistor allows the flow of electrons from its emitter to collector and is primarily used for amplification and switching with a positive polarity signal.
  • Collector-Emitter Voltage (VCEO): 80V - This rating indicates the maximum voltage the transistor can withstand across the collector-emitter terminals when the base terminal is open.
  • Collector Current (IC): 500 mA - The maximum continuous current that can flow through the collector of the transistor, making it suitable for moderate power applications.
  • Power Dissipation (Pd): 225 mW - The maximum power that the transistor can dissipate without exceeding its maximum operating temperature, ensuring stable performance during operation.
  • DC Current Gain (hFE): 100 to 250 - This parameter indicates the transistor's ability to amplify the input signal, with a minimum gain of 100, making it an effective choice for amplification purposes.
  • Package / Case: SOT-323 - A small and lightweight surface-mount package that allows for high-density mounting and is suitable for automated assembly processes.
  • Moisture Sensitivity Level (MSL): 1 - This rating ensures that the device has a low sensitivity to moisture, providing reliability in various environmental conditions.
  • RoHS Compliant: Yes - The SMMBTA56WT3G adheres to the Restriction of Hazardous Substances Directive, making it environmentally friendly and safe for use in electronic equipment.

Applications:

The ON Semiconductor SMMBTA56WT3G is versatile and can be used in a wide range of applications, including but not limited to:

  • Signal processing
  • Power management
  • Amplification circuits
  • Switching circuits
  • Linear amplifiers
  • Consumer electronics
  • Automotive industry

With its high voltage and current capabilities combined with a solid current gain, the SMMBTA56WT3G is an excellent choice for designers looking for a robust PNP transistor for their electronic projects.

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