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DCX56-13

Part No DCX56-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 80V 1A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Cut Reel
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 500mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 63 @ 150mA, 2V
Maximum Power Dissipation 1W
Frequency - Transition 200MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 013898-DCX56-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DCX56-13 CAD Model

Description

Introducing the DCX56-13 NPN Transistor from Diodes Incorporated

Diodes Incorporated, a leading manufacturer in the semiconductor market, presents the DCX56-13, a high-performance NPN bipolar junction transistor (BJT) designed to meet the diverse needs of modern electronic applications. This robust transistor is engineered to provide a balance of efficiency and reliability for both industrial and consumer electronics.

The DCX56-13 features a compact package that is ideal for space-constrained applications. It boasts a collector-emitter voltage (VCEO) of 80V, which allows it to handle moderate power circuits with ease. The collector current (IC) is rated at 1A, making it suitable for a wide range of driving and switching operations.

With a transition frequency (fT) of 100MHz, the DCX56-13 is capable of operating at high frequencies, which is crucial for applications such as amplification and signal processing. Its high gain bandwidth product ensures that it can amplify signals with minimal loss of fidelity, making it an excellent choice for audio applications and RF circuits.

The device's hFE (DC current gain) is characterized in a range that ensures consistent performance across various conditions. This parameter is critical for applications that require precise control over gain, such as analog signal amplification. Additionally, the DCX56-13 features low saturation voltages, which help to reduce power dissipation and improve overall efficiency in switching applications.

Diodes Incorporated has designed the DCX56-13 with thermal and electrical performance in mind. Its power dissipation is rated at 1.25W, which allows for a good balance between power handling and thermal management. The device is also characterized by a low collector-emitter saturation voltage, which minimizes on-state losses and enhances circuit efficiency.

The DCX56-13 is available in a SOT-89 package, known for its excellent power dissipation capabilities. This package is widely used in the industry due to its balance of size and thermal performance, making it an ideal choice for both prototyping and mass production.

Whether you are designing power management systems, motor controllers, or audio amplifiers, the DCX56-13 from Diodes Incorporated is a reliable and efficient solution that ensures your circuits perform at their best.

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Pricing & Ordering

Quantity Unit Price Ext. Price
280+ $0.2069 $57.9320
685+ $0.1698 $116.3130
1,055+ $0.1645 $173.5475
1,455+ $0.1592 $231.6360
1,880+ $0.1538 $289.1440
2,515+ $0.1379 $346.8185
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,500 pieces
MOQ: 280 pcs
Order Increment : 1 pcs
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