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SS9015ABU

Part No SS9015ABU
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 45V 0.1A TO92-3  /  Bipolar (BJT) Transistor PNP 45 V 100 mA 190MHz 450 mW Through Hole TO-92-3
Datasheet
Sample
Rohs State Need to verify
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Bulk
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 1mA, 5V
Power - Max 450 mW
Frequency - Transition 190MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Base Product Number SS9015
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 1,000
Win Source Part Number 1134190-SS9015ABU
Ultra Librarian 3D Model Ultra Librarian SS9015ABU CAD Model

Description

The ON Semiconductor SS9015ABU represents a high-quality PNP bipolar junction transistor (BJT) designed for general-purpose amplifier applications. This versatile component is a fundamental building block in electronic circuits, offering a blend of reliability and performance that is well-suited for a variety of applications, including signal amplification, switching, and voltage regulation.

Key Features

  • Transistor Polarity: PNP - This type of transistor effectively conducts when a small current flows through the base to the emitter, allowing a larger current to flow from the collector to the emitter.
  • Collector-Emitter Voltage (VCEO): The SS9015ABU can withstand up to -45 V between its collector and emitter, providing a robust voltage handling capability for a range of electronic designs.
  • Collector Current (IC): It supports a maximum continuous collector current of -0.5 A, making it suitable for moderate power applications.
  • Power Dissipation (Pd): With a power dissipation of 0.625 W, this transistor can handle a fair amount of power, making it reliable for continuous operation in various circuits.
  • DC Current Gain (hFE): The SS9015ABU has a high DC current gain, typically in the range of 70 to 700, offering efficient current amplification in electronic circuits.
  • Package: The device comes in a TO-92 package, a widely used and easily mountable form factor that is compatible with many PCB designs.

Applications

The SS9015ABU is suitable for a broad range of applications, including:

  • Audio amplifiers and pre-amplifiers
  • Signal processing
  • Switching circuits
  • Voltage regulation modules
  • Driver stages in hi-fi systems and TVs

With its impressive specifications and versatile nature, the ON Semiconductor SS9015ABU PNP transistor is a reliable choice for designers and hobbyists alike who require a component that delivers consistent performance with a wide array of functionalities.

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