The FM31L276 is a 4 Mbit low-voltage F-RAM (Ferroelectric Random Access Memory) device manufactured by Ramtron (now Cypress Semiconductor/Infineon). It offers the advantages of RAM with the non-volatility of ROM, providing high endurance, low power consumption, and fast write speeds. Compared to traditional EEPROM or battery-backed SRAM, the FM31L276 delivers superior performance and reliability, making it suitable for various embedded systems applications.

Applications

• Data Logging
• Industrial Controls
• Medical Devices
• Automotive Electronics
• Smart Meters

Features

• 4 Mbit (512K x 8) Nonvolatile Memory
• High Endurance: 10<sup>14 Read/Write Cycles
• High-Speed SPI Interface: Up to 40 MHz
• Low Voltage Operation: 2.0V to 3.6V
• Low Power Consumption: Active current of 2.5mA, Standby current of 6μA
• Write Protection Features
• RoHS Compliant

Benefits

• Instantaneous non-volatile write capability for reliable data storage
• Extremely long lifespan due to its high read/write endurance
• Low power operation extends battery life in portable devices
• Fast SPI interface enables quick data access
• Data retention without the need for external batteries

Technical Specifications

The FM31L276 operates with a supply voltage range of 2.0V to 3.6V and utilizes a standard SPI serial interface for communication. The device features a typical active current of approximately 2.5mA and a standby current of around 6μA. The operating temperature range is -40°C to +85°C, making it suitable for industrial environments. The memory array is organized as 512K x 8 bits. Its fast write capability allows for continuous data logging without the write delays associated with EEPROM or Flash memory. This makes it a reliable choice for demanding applications that require frequent and rapid data storage. Package options typically include SOIC and TSSOP.