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Same model may have multiple batches, images only for reference.
2SA1413-Z-AZ
Same model may have multiple batches, images only for reference.

2SA1413-Z-AZ

Part No 2SA1413-Z-AZ
Manufacturer Renesas Electronics America
Catalog RF Transistors (BJT)
Description Trans GP BJT PNP 600V 1A 3-Pin(2+Tab) TO-252
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Case / Package TO-252
Collector Base Voltage (VCBO) 600 V
Collector Emitter Voltage (VCEO) 600 V
Emitter Base Voltage (VEBO) 7 V
Frequency 28 MHz
Lead Free Lead Free
Max Collector Current 1 A
Max Operating Temperature 150 °C
Max Power Dissipation 2 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Polarity PNP
Power Dissipation 2 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1169750-2SA1413-Z-AZ
Categories RF Transistors(BJT)
Manufacturer Renesas Electronics America
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SA1413-Z-AZ CAD Model

Description

The 2SA1413-Z-AZ is an RF transistor manufactured by Renesas Electronics America.

  • Polarity: PNP
  • Frequency: 28MHz
  • Lead-Free: Yes
  • RoHS Compliant: Yes
  • Operating Temperature Range: -55°C to 150°C
  • Package Type: TO-252
  • Mounting Type: surface mounted
  • Collector Base Voltage (VCBO): 600V
  • Collector Emitter Voltage (VCEO): 600V
  • Emitter Base Voltage (VEBO): 7V
  • Max Collector Current: 1A
  • Radiation Hardening: no

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