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RN1103CT(TPL3)

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Part No	RN1103CT(TPL3)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS NPN 0.05W CST3
Datasheet	RN1103CT(TPL3) Datasheet
Sample
Rohs State
ECAD Module
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Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Obsolete(EOL)
Transistor Polarity	NPN - Pre-Biased
Maximum Current Collector	50mA
VCEO Maximum Collector-Emitter Breakdown Voltage	20V
Resistor - Base (R1) (Ohms)	22k
Resistor - Emitter Base (R2) (Ohms)	22k
Typical Gain (hFE) (Min)	100 @ 10mA, 5V
Max Vce (sat)	150mV @ 250μA, 5mA
Collector Cut-off Current(Max)	500nA
Maximum Power Dissipation	50mW
Mounting	SMD (SMT)
Case / Package	CST3
Win Source Part Number	098368-RN1103CT(TPL3)
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian RN1103CT(TPL3) CAD Model

Alternative Products

Description

The Toshiba Semiconductor and Storage 098368-RN1103CT(TPL3) is an obsolete (EOL) NPN transistor with a pre-biased configuration.

Status: obsolete (EOL)
Type: NPN transistor with a pre-biased configuration
Collector-Emitter Breakdown Voltage: 20V
Maximum Current Collector: 50mA
Maximum Power Dissipation: 50mW
Mounting: surface mount device (SMD)
Typical Gain (hFE): 100 @ 10mA and 5V
Maximum Vce (sat): 150mV @ 250μA and 5mA
Supply and Demand Status: sufficient

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