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2SC2719-L(A)

Part No 2SC2719-L(A)
Manufacturer Renesas Electronics America
Catalog RF Transistors (BJT)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

RoHS Non-Compliant
Win Source Part Number 1036958-2SC2719-L(A)
Categories RF Transistors(BJT)
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SC2719-L(A) CAD Model

Description

The Renesas Electronics America 2SC2719-L(A) is an NPN silicon epitaxial planar transistor designed for high-frequency amplification. This RF transistor is commonly used in various radio frequency applications, providing reliable performance and low noise amplification. Its construction and characteristics make it suitable for use in oscillators, mixers, and amplifier stages in communication equipment.

Applications

  • RF Amplifiers: Used in low-noise amplifiers (LNAs) and other amplifier circuits.
  • Oscillators: Employed in oscillator circuits for generating radio frequencies.
  • Mixers: Utilized in mixer circuits for frequency conversion.
  • Communication Equipment: Integrated into radio transmitters and receivers.
  • Wireless Devices: Found in various wireless communication devices.

Features

  • Low Noise Figure: Offers excellent low-noise performance.
  • High Transition Frequency: Provides high-frequency amplification capabilities.
  • Small Signal Amplifier: Designed for small signal applications.
  • Surface Mount Package: Allows for easy assembly on PCBs.
  • Pb-Free (RoHS Compliant): Meets environmental standards.

Benefits

  • Improved Signal Quality: Amplifies signals with minimal added noise.
  • Enhanced Communication Range: Increases the range of wireless devices.
  • Stable Performance: Provides reliable operation in various conditions.
  • Simplified Assembly: Easier to integrate into electronic devices.
  • Environmentally Friendly: Complies with RoHS regulations.

Additional Details

The 2SC2719-L(A) typically features a collector-emitter voltage (Vceo) of 25V, a collector current (Ic) of 50mA, and a transition frequency (ft) of approximately 6.5 GHz. It is housed in a small surface mount package. The power dissipation is typically around 150mW. For optimal performance, it is important to follow the manufacturer's recommended biasing and matching techniques. Refer to the datasheet for specific electrical characteristics, thermal considerations, and soldering guidelines. The low noise figure and high gain make it suitable for sensitive receiver applications.

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