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2SJ625-T1B-AT

Part No 2SJ625-T1B-AT
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet P-ch 20V SC-96 SOT-23
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 3 A
Drain to Source Voltage (Vdss) 20 V
RoHS Compliant
Win Source Part Number 1037565-2SJ625-T1B-AT
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SJ625-T1B-AT CAD Model

Description

The 2SJ625-T1B-AT is a P-channel MOSFET manufactured by Renesas Electronics America, designed for switching and amplification applications. This MOSFET is engineered to provide efficient performance in low-voltage and low-current circuits. Its key features include a low on-resistance and fast switching speed, making it suitable for various portable devices and power management systems.

Applications:

  • Load Switching: Used to switch power to various loads in portable electronic devices.
  • Power Management: Employed in power management circuits for efficient power distribution.
  • DC-DC Converters: Utilized in DC-DC converters for voltage regulation.
  • Battery Protection Circuits: Integrated into battery protection systems to prevent overcharging and over-discharging.
  • Portable Devices: Incorporated into smartphones, tablets, and other portable electronics.

Features:

  • P-Channel MOSFET: Offers P-channel conductivity for specific circuit designs.
  • Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • High-Speed Switching: Enables fast switching speeds for efficient operation.
  • Small Package Size: Allows for integration into compact electronic devices.
  • Low Gate Charge: Reduces switching losses.

Benefits:

  • Improved Efficiency: Low on-resistance reduces power dissipation, extending battery life.
  • Compact Design: Small package size enables integration into space-constrained applications.
  • Enhanced Reliability: Robust design ensures stable performance.
  • Simplified Circuit Design: Facilitates easier integration into various circuits.
  • Reduced Power Consumption: Minimizes power consumption in portable devices.

Additional Details:

The 2SJ625-T1B-AT operates within defined gate-source voltage (VGS) and drain-source voltage (VDS) ranges, as specified in the Renesas datasheet. Proper thermal management techniques should be employed to ensure optimal operating temperatures. For comprehensive information on electrical characteristics, application guidelines, and thermal considerations, refer to the Renesas Electronics America datasheet. Implementing appropriate gate drive circuitry is important for maximizing switching performance and efficiency. Verify the specific package dimensions and recommended PCB footprint layout in the product datasheet for proper assembly.

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