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Same model may have multiple batches, images only for reference.
2SK1859-E Real Image
Same model may have multiple batches, images only for reference.

2SK1859-E

Part No 2SK1859-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 6A TO-3P
Datasheet
2SK1859-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Input Capacitance 980pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1004704-2SK1859-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK1859-E CAD Model

Description

The Renesas Electronics America 2SK1859-E is an N-channel MOSFET with a maximum power dissipation of 60W (Tc).

  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 6A (Ta) @ 25°C
  • Maximum Rds On @ Id,Vgs: 3 Ohm @ 3A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Input Capacitance: 980pF @ 10V
  • Package: TO-3P
  • Popularity: Medium
  • Supply and Demand: Balanced

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