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Same model may have multiple batches, images only for reference.
HAT2169H-EL Real Image
Same model may have multiple batches, images only for reference.

HAT2169H-EL

Part No HAT2169H-EL
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 50A LFPAK
Datasheet
HAT2169H-EL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 45nC @ 4.5V
Max Input Capacitance 6650pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 25A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 040428-HAT2169H-EL
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HAT2169H-EL CAD Model

Description

The Renesas Electronics America 040428-HAT2169H-EL is a medium-popularity MOSFET electronic component used in discrete semiconductor products.

Key aspects:

  • Status: Active
  • Mounting: SMD (SMT)
  • Polarity: N-Channel
  • Power Dissipation (Max): 30W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Continuous Drain Current @ 25°C: 50A (Ta)
  • Drain-Source Breakdown Voltage: 40V
  • Max Rds On @ Id, Vgs: 3.5 mOhm @ 25A, 10V
  • Supply and Demand: Limited
  • Manufacturer: Renesas Electronics America

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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