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Same model may have multiple batches, images only for reference.
NP110N04PUG-E1 Real Image
Same model may have multiple batches, images only for reference.

NP110N04PUG-E1

Part No NP110N04PUG-E1
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V MP-25ZP/TO-263
Datasheet
NP110N04PUG-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 390nC @ 10V
Max Input Capacitance 25700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 288W (Tc)
Maximum Rds On at Id,Vgs 1.8 mOhm @ 55A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 045317-NP110N04PUG-E1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NP110N04PUG-E1 CAD Model

Description

The Renesas Electronics America NP110N04PUG-E1 is a MOSFET transistor designed for use in various electronic devices.

  • Maximum Power Dissipation: 1.8W
  • Drain-Source Breakdown Voltage: 40V
  • Transistor Type: N-channel MOSFET

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.6643 $58.3215
13+ $9.5715 $124.4295
19+ $9.2723 $176.1737
26+ $8.9732 $233.3032
34+ $8.6741 $294.9194
45+ $7.7766 $349.9470
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Availability: 11,400 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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