The Renesas Electronics America NP110N04PUK-E1-AY is an N-channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 110A at 25°C. Bold the product name (e.g., NP110N04PUK-E1-AY) and manufacturer (e.g., Renesas Electronics America).

• Channel Type: N-channel
• Drain-Source Breakdown Voltage: 40V
• Continuous Drain Current @ 25°C: 110A
• Power Dissipation (Ta): 1.8W
• Power Dissipation (Tc): 348W
• Package: TO-263-3
• Maximum Rds On @ Id,Vgs: 1.4 mOhm @ 55A, 10V
• Maximum Gate-Source Voltage: ±20V
• Use: suitable for use in discrete semiconductor products