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Same model may have multiple batches, images only for reference.
NP52N055SUG-E1-AY Renesas Electronics America
Same model may have multiple batches, images only for reference.

NP52N055SUG-E1-AY

Part No NP52N055SUG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 52A TO-252
Datasheet
NP52N055SUG-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 57nC @ 10V
Max Input Capacitance 3200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta), 56W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 26A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252 (MP-3ZK)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083335-NP52N055SUG-E1-AY
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NP52N055SUG-E1-AY CAD Model

Description

The Renesas Electronics America NP52N055SUG-E1-AY is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Manufacturer: Renesas Electronics America
  • Product Name: NP52N055SUG-E1-AY
  • Channel Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 52A @ 25°C
  • Maximum Rds On: 14 mOhm @ 26A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 57nC @ 10V
  • Package: TO-252 (MP-3ZK)

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