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NP55N055SDG

Part No NP55N055SDG
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 55A TO-252
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 96nC @ 10V
Max Input Capacitance 4800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta), 77W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 28A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252 (MP-3ZK)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 258923-NP55N055SDG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP55N055SDG CAD Model

Description

The Renesas Electronics America 258923-NP55N055SDG is an N-Channel MOSFET suitable for various electronic applications.

  • Manufacturer: Renesas Electronics America
  • Product: 258923-NP55N055SDG
  • Type: N-Channel MOSFET
  • Maximum Power Dissipation: 1.2W (Ta) and 77W (Tc)
  • Continuous Drain Current: 55A (Tc)
  • Package: reel - TR
  • Mounting: SMD (SMT) technology
  • Status: This component is obsolete (EOL)
  • Temperature Range: 175°C (TJ).

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