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Same model may have multiple batches, images only for reference.
NP90N03VLG-E1-AY Renesas Electronics America
Same model may have multiple batches, images only for reference.

NP90N03VLG-E1-AY

Part No NP90N03VLG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 90A TO-252
Datasheet
NP90N03VLG-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 135nC @ 10V
Max Input Capacitance 7500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.2W (Ta), 105W (Tc)
Maximum Rds On at Id,Vgs 3.2 mOhm @ 45A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083363-NP90N03VLG-E1-AY
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NP90N03VLG-E1-AY CAD Model

Description

The Renesas Electronics America NP90N03VLG-E1-AY is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 90A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 90A @ 25°C
  • Power Dissipation: 1.2W (Ta) and 105W (Tc)
  • Package: TO-252-3
  • Maximum Rds On @ Id,Vgs: 3.2 mOhm @ 45A, 10V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4701 $58.7625
300+ $0.3858 $115.7400
465+ $0.3731 $173.4915
640+ $0.3615 $231.3600
830+ $0.3500 $290.5000
1,110+ $0.3130 $347.4300
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