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Same model may have multiple batches, images only for reference.
RJH65D27BDPQ-A0#T2 Real Image
Same model may have multiple batches, images only for reference.

RJH65D27BDPQ-A0#T2

Part No RJH65D27BDPQ-A0#T2
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT TRENCH 650V 100A TO247A / IGBT Trench 650 V 100 A 375 W Through Hole TO-247A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Renesas Electronics America Inc
Package Tube
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 100 A
Vce(on) (Max) @ Vge, Ic 1.65V @ 15V, 50A
Power - Max 375 W
Switching Energy 1mJ (on), 1.5mJ (off)
Input Type Standard
Gate Charge 175 nC
Td (on/off) @ 25°C 20ns/165ns
Test Condition 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr) 80 ns
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247A
Base Product Number RJH65D27
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1
Win Source Part Number 1022325-RJH65D27BDPQ-A0#T2
Ultra Librarian 3D Model Ultra Librarian RJH65D27BDPQ-A0#T2 CAD Model

Description

The Renesas RJH65D27BDPQ-A0#T2 is a single IGBT (Insulated Gate Bipolar Transistor) discrete semiconductor product.

  • Maximum Power: 375 W
  • Reverse Recovery Time (trr): 80 ns
  • IGBT Type: trench
  • Voltage Range: 650 V
  • Current Range: 100 A
  • Switching Energy: 1mJ (on), 1.5mJ (off)
  • Operating Temperature: 175°C (TJ)
  • Package: TO-247-3
  • Supplier Device Package: TO-247A

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