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Same model may have multiple batches, images only for reference.
RJK0355DSP-00#J0 Real Image
Same model may have multiple batches, images only for reference.

RJK0355DSP-00#J0

Part No RJK0355DSP-00#J0
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A 8-SOP
Datasheet
RJK0355DSP-00#J0 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 6nC @ 4.5V
Max Input Capacitance 860pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 11.1 mOhm @ 6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 096367-RJK0355DSP-00#J0
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RJK0355DSP-00#J0 CAD Model

Description

The Renesas Electronics America MOSFET is a N-channel power MOSFET with a drain-source breakdown voltage of 30V and a maximum continuous drain current of 12A @ 25°C.

  • Rds On (Max): 11.1 mOhm @ Id,Vgs of 6A, 10V
  • Category: Discrete semiconductor products
  • Operating Temperature: 150°C (TJ)
  • Package: 8-SOP
  • Mounting: SMD (SMT) technology
  • Gate-Source Voltage (Max): ±20V
  • Gate Charge (Max): 6nC @ 4.5V
  • Input Capacitance: 860pF @ 10V
  • Power Dissipation (Max): 1.8W (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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