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RJP3053DPP-A9

Part No RJP3053DPP-A9
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Renesas Electronics America
Win Source Part Number 295432-RJP3053DPP-A9
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJP3053DPP-A9 CAD Model

Description

The RJP3053DPP-A9 is an N-channel IGBT (Insulated Gate Bipolar Transistor) manufactured by Renesas Electronics America. As an IGBT, it effectively combines the advantages of MOSFETs and BJTs, offering high input impedance, voltage-controlled operation, and low on-state conduction losses. This particular model is designed for applications requiring efficient and reliable high-speed switching.

Applications

  • Induction Heating (IH) Cookers: Commonly found in the inverter stage, it provides precise power control for efficient heating.
  • Uninterruptible Power Supplies (UPS): Used to ensure continuous power delivery, contributing to the overall system efficiency.
  • Power Factor Correction (PFC) Circuits: Improves the power factor of electronic devices, minimizing energy waste and optimizing power usage.
  • Inverters: Suitable for a variety of inverter applications due to its fast switching characteristics.
  • General Purpose Inverter Applications: Provides reliable and efficient power control in various inverter designs.

Features

  • High-Speed Switching: Optimized for rapid switching to minimize switching losses and maximize efficiency.
  • Low Saturation Voltage (VCE(sat)): Reduces conduction losses, leading to cooler operation and improved power efficiency.
  • High Input Impedance: Simplifies the design of the drive circuit and reduces the power needed for gate driving.
  • Integrated Fast Recovery Diode (FWD): Provides protection against reverse currents, enhancing the robustness of the device.
  • RoHS Compliant: Pb-free design, meeting environmental regulatory standards.

Benefits

  • Enhanced Energy Efficiency: Reduced switching and conduction losses improve energy efficiency across various applications.
  • Improved Reliability: Robust design and integrated FWD ensure dependable performance under demanding conditions.
  • Simplified Circuit Design: High input impedance makes the design of the gate drive circuit easier.
  • Cost Reduction: The integrated FWD eliminates the need for an external diode, reducing component costs.
  • Compact Design: Enables more compact and efficient designs in applications such as IH cookers and UPS systems.

Specifications

The RJP3053DPP-A9 typically features a collector-emitter voltage (VCE) rating of 450V, a collector current (IC) rating in the range of 30A, and a gate-emitter voltage (VGE) rating of ±20V. The operating junction temperature ranges from -55°C to +150°C. Consult the specific datasheet revision for precise parameter values.

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205+ $1.6955 $347.5775
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Availability: 5,780 pieces
MOQ: 23 pcs
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