The 2SA1036K R is a PNP bipolar junction transistor (BJT) manufactured by Rohm Semiconductor. This transistor is generally used for switching and amplification purposes in various electronic circuits.

Applications

• Audio amplifiers
• Switching circuits
• General-purpose amplification
• Voltage regulation
• Current amplification

Features

• PNP Bipolar Transistor
• Low noise figure
• High hFE (current gain)
• Small signal amplification
• RoHS compliant

Benefits

• Excellent signal amplification with minimal added noise, crucial for audio applications.
• Efficient switching performance for controlling circuits.
• High current gain allows for effective signal boosting.
• Compact size makes it suitable for a wide range of applications.
• Environmentally friendly due to RoHS compliance.

Technical Specifications (General - Specific values need to be confirmed via search)

While definitive specifications require a search, typical specifications for this type of BJT include:

• Collector-Base Voltage (VCBO): -[Value] V (Needs confirmation)
• Collector-Emitter Voltage (VCEO): -[Value] V (Needs confirmation)
• Emitter-Base Voltage (VEBO): -[Value] V (Needs confirmation)
• Collector Current (IC): -[Value] A (Needs confirmation)
• Power Dissipation (PC): [Value] W (Needs confirmation)
• hFE (Current Gain): [Value] (Needs confirmation)

Note: Always refer to the manufacturer's datasheet for precise technical specifications and application guidelines.