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Same model may have multiple batches, images only for reference.
DTC114WSATP Rohm Semiconductor
Same model may have multiple batches, images only for reference.

DTC114WSATP

Part No DTC114WSATP
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 300MW SPT
Datasheet
DTC114WSATP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging AMMO PACKAGE
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 24 @ 10mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting Through Hole
Case / Package SPT
Win Source Part Number 1035582-DTC114WSATP
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DTC114WSATP CAD Model

Description

The DTC114WSATP is a NPN pre-biased transistor manufactured by Rohm Semiconductor.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Typical Gain (hFE): 24 @ 10mA and 5V
  • Maximum Power Dissipation: 300mW
  • Frequency Transition: 250MHz
  • Collector Cut-Off Current: Maximum 500nA
  • Packaging: Ammo package
  • Mounting: Through hole
  • Category: Discrete semiconductor products
  • Status: Obsolete (EOL)
  • Supply and Demand: Sufficient
  • Manufacturer: Rohm Semiconductor

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