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RN2316,LXHF

Part No RN2316,LXHF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description AUTO AEC-Q TR PNP BRT, Q1BSR=4.7 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
Sample
Rohs State Need to verify
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200 MHz
Power - Max 100 mW
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package SC-70
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Other Names 264-RN2316,LXHFCT-ND,264-RN2316,LXHFCT,264-RN2316LXHFCT,264-RN2316,LXHFTR-ND,264-RN2316LXHFTR,264-RN2316LXHFDKR,264-RN2316,LXHFDKR-ND,264-RN2316,LXHFTR,264-RN2316,LXHFDKR
Standard Package 3,000
Win Source Part Number 1122352-RN2316,LXHF
Ultra Librarian 3D Model Ultra Librarian RN2316,LXHF CAD Model

Description

The RN2316,LXHF is a pre-biased PNP bipolar transistor from Toshiba Semiconductor and Storage with a maximum power of 100 mW.

  • Voltage Collector Emitter Breakdown: 50 V
  • Maximum Collector Current: 100 mA
  • Vce Saturation: 300mV @ 250µA, 5mA
  • Current Collector Cutoff: 500nA
  • DC Current Gain (hFE): 50 @ 10mA, 5V
  • Frequency Transition: 200 MHz
  • Mounting Type: SMD (SMT)
  • Package/Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
  • Standard Package: 3,000
  • Resistor Base (R1): 4.7 kOhms
  • Resistor Emitter Base (R2): 10 kOhms
  • ECCN: EAR99
  • Series: RN2316

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