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DDTC114WUA-7-F

Part No DDTC114WUA-7-F
Manufacturer Diodes Incorporated
Catalog RF Transistors (BJT)
Description TRANS PREBIAS NPN 200MW SOT323 / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SOT-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Diodes Incorporated
Package Tape & Reel
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 24 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz
Power - Max 200 mW
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package SOT-323
Base Product Number DDTC114
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names DDTC114WUA-FDITR,DDTC114WUA-FDICT,DDTC114WUA7F,DDTC114WUA-FDIDKR
Standard Package 3,000
Win Source Part Number 1137242-DDTC114WUA-7-F
Ultra Librarian 3D Model Ultra Librarian DDTC114WUA-7-F CAD Model

Description

Introducing the DDTC114WUA-7-F - NPN Pre-Biased Transistor

Diodes Incorporated presents the DDTC114WUA-7-F, an NPN pre-biased transistor that offers a compact and efficient solution for a variety of switching and amplification applications. This discrete semiconductor product is designed to simplify circuit designs by integrating a bias resistor network, which reduces component count and conserves board space.

Key Features

  • Pre-Biased Configuration: The DDTC114WUA-7-F comes with built-in biasing resistors. This integration ensures consistent performance and simplifies circuit layout by eliminating the need for external resistors.
  • Surface-Mount Package: Encased in a small SOT-323 package, this transistor is ideal for space-constrained applications. Its surface-mount design allows for efficient assembly and is compatible with automated pick-and-place equipment.
  • High Power Gain: With its high amplification capabilities, the DDTC114WUA-7-F is capable of delivering significant power gain, making it suitable for signal amplification in a wide range of electronic devices.
  • Low On-Voltage: The device exhibits low on-voltage, which translates to reduced power loss and improved energy efficiency in operation.
  • Robust Performance: Engineered for reliability, this transistor is capable of withstanding the rigors of commercial and industrial environments, ensuring stable operation over its lifespan.

Applications

The DDTC114WUA-7-F is versatile and can be used in various applications, including:

  • Logic level shifting
  • Signal processing
  • Power management
  • DC-DC converters
  • Telecommunications
  • Consumer electronics

With its integrated bias resistors and compact form factor, the DDTC114WUA-7-F from Diodes Incorporated is an excellent choice for designers looking to streamline their circuit designs. Whether it's for amplifying signals or switching applications, this NPN pre-biased transistor provides a reliable and efficient solution.

Ordering Information

The DDTC114WUA-7-F is available for order now. For detailed specifications, datasheets, and ordering information, please visit the Diodes Incorporated website or contact your local distributor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,085+ €0.0251 €52.3602
5,080+ €0.0207 €105.0060
7,855+ €0.0200 €157.3817
10,815+ €0.0194 €209.8244
13,970+ €0.0188 €262.1697
18,750+ €0.0168 €314.4769
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 2085 pcs
Order Increment : 1 pcs
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