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UNR521LG0L

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Part No	UNR521LG0L
Manufacturer	Panasonic
Catalog	RF Transistors (BJT)
Description	TRANS PREBIAS NPN 150MW SMINI3 / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 150 mW Surface Mount SMini3-F2
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr	Panasonic Electronic Components
Package	Tape & Reel
Product Status	Obsolete
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	150 MHz
Power - Max	150 mW
Mounting	SMD (SMT)
Package / Case	SC-85
Supplier Device Package	SMini3-F2
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0075
Other Names	UNR521LG0LDKR,UNR521LG0LCT,UNR521LG0LTR
Standard Package	3,000
Win Source Part Number	1144025-UNR521LG0L
Ultra Librarian 3D Model	Ultra Librarian UNR521LG0L CAD Model

Description

The UNR521LG0L is a pre-biased NPN transistor from Panasonic Electronic Components.

Win Source Part Number: 1144025
Package: Tape and Reel
Standard Package: 3,000
Maximum Power: 150 mW
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Frequency Transition: 150 MHz
Package/Case: SC-85
Supplier Device Package: SMini3-F2
MSL Level: 1 (Unlimited)
Resistor-Base (R1): 4.7 kOhms
Resistor-Emitter Base (R2): 4.7 kOhms
HTSUS: 8541.21.0075
Status: Obsolete

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