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Same model may have multiple batches, images only for reference.
DTC123EEBTL Real Image
Same model may have multiple batches, images only for reference.

DTC123EEBTL

Part No DTC123EEBTL
Manufacturer Rohm Semiconductor
Catalog RF Transistors (BJT)
Description NPN 100MA 50V DIGITAL TRANSISTOR / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount EMT3F (SOT-416FL)
Datasheet
DTC123EEBTL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Rohm Semiconductor
Package Tape & Reel
Product Status Not For New Designs
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz
Power - Max 150 mW
Mounting SMD (SMT)
Package / Case SC-89, SOT-490
Supplier Device Package EMT3F (SOT-416FL)
Base Product Number DTC123
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 846-DTC123EEBTLCT,846-DTC123EEBTLTR,846-DTC123EEBTLDKR
Standard Package 3,000
Win Source Part Number 1157416-DTC123EEBTL
Ultra Librarian 3D Model Ultra Librarian DTC123EEBTL CAD Model

Description

The DTC123EEBTL is a product of Rohm Semiconductor, a bipolar transistor that is pre-biased.

  • Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
  • Supply and Demand Status: balanced
  • Maximum Power: 150 mW
  • Voltage Collector Emitter Breakdown: 50V
  • Current Collector: 100 mA
  • Transistor Type: NPN Pre-Biased
  • Vce Saturation: 300mV @ 500µA, 10mA
  • Current Collector Cutoff: 500nA
  • DC Current Gain: 20 @ 20mA, 5V
  • Frequency Transition: 250 MHz
  • EAR99: EAR99

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