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Same model may have multiple batches, images only for reference.
DTC363EK Real Image
Same model may have multiple batches, images only for reference.

DTC363EK

Part No DTC363EK
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SMT3
Datasheet
DTC363EK Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Resistor - Base (R1) (Ohms) 6.8k
Resistor - Emitter Base (R2) (Ohms) 6.8k
Typical Gain (hFE) (Min) 70 @ 50mA, 5V
Max Vce (sat) 80mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SMT3
Win Source Part Number 051013-DTC363EK
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DTC363EK CAD Model

Description

Features and Benefits

  • High current gain
  • Low saturation voltage
  • Compact size for space efficiency

Applications

  • Switching circuits
  • Amplifiers
  • Signal processing

The DTC363EK transistor is designed for general-purpose amplification and switching applications. Its compact size allows for efficient use in space-constrained environments, making it ideal for modern electronics. Users benefit from its high current gain and low saturation voltage, ensuring optimal performance in a variety of circuits.

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3+ $27.0651 $81.1953
6+ $22.2072 $133.2432
9+ $21.5130 $193.6170
12+ $20.8200 $249.8400
15+ $20.1259 $301.8885
20+ $18.0434 $360.8680
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MOQ: 3 pcs
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