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Same model may have multiple batches, images only for reference.
QS8J1TR Real Image
Same model may have multiple batches, images only for reference.

QS8J1TR

Part No QS8J1TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 4.5A TSMT8
Datasheet
QS8J1TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 29 mOhm @ 4.5A, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 31nC @ 4.5V
Max Input Capacitance 2450pF @ 6V
Maximum Power Dissipation 1.5W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT8
Win Source Part Number 027060-QS8J1TR
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian QS8J1TR CAD Model

Description

The Rohm Semiconductor 027060-QS8J1TR is a dual 2 P-Channel FET with a logic level gate.

  • Operating Temperature: up to 150°C
  • Maximum Power Dissipation: 1.5W
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 4.5A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Gate Charge: 31nC @ 4.5V
  • Maximum Input Capacitance: 2450pF @ 6V
  • Maximum Rds On: 29 mOhm @ 4.5A, 4.5V
  • Package: TSMT8
  • Recommendation: not recommended for new designs
  • Supply and Demand Status: limited

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