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Same model may have multiple batches, images only for reference.
R6020ANZC8 Real Image
Same model may have multiple batches, images only for reference.

R6020ANZC8

Part No R6020ANZC8
Manufacturer Rohm Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 600V 20A TO3PF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Rohm Semiconductor
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) at 25°C 20A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 220mOhm at 10A, 10V
Vgs(th) (Maximum) at Id 4.15V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 65nC at 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2040pF at 25V
Power Dissipation (Maximum) 120W (Tc)
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-3PF
Manufacturer Package TO-3P-3 Full Pack
Manufacturer Pack Quantity 360
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 811586-R6020ANZC8
Ultra Librarian 3D Model Ultra Librarian R6020ANZC8 CAD Model

Description

The Rohm Semiconductor R6020ANZC8 is an N-channel MOSFET transistor.

  • Drain to Source Voltage (Vdss): 600V
  • Rds On: 220mOhm @ 10A, 10V
  • Gate Charge (Qg): 65nC @ 10V
  • Input Capacitance (Ciss): 2040pF @ 25V
  • Current Continuous Drain (Id): 20A @ 25°C
  • Mounting Type: Through-hole
  • Package/Case: TO-3P-3 Full Pack
  • Power Dissipation (Maximum): 120W (Tc)
  • Temperature Range: 150°C

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