The RFU02VS8SGTR is a Schottky Barrier Diode manufactured by Rohm Semiconductor. It is designed for high-frequency rectification and switching applications. Featuring low forward voltage and fast switching speeds, this diode is well-suited for use in circuits where efficiency and quick response times are crucial. Its compact size makes it suitable for densely populated circuit boards.

Applications

• High-frequency rectification
• Switching power supplies
• DC-DC converters
• Free-wheeling diodes in inductive loads
• RF detectors

Features

• Low forward voltage drop: Minimizes power loss during conduction.
• Fast switching speed: Enables quick response times in high-frequency circuits.
• Small package size: Allows for compact circuit designs.
• High surge current capability: Provides robustness against transient voltage spikes.
• Halogen-free: Complies with environmental regulations.

Benefits

• Improved efficiency: Reduces power dissipation in rectification and switching applications.
• Enhanced circuit performance: Enables faster and more reliable operation of electronic circuits.
• Compact design: Allows for smaller and more densely populated circuit boards.
• Increased reliability: Provides robust performance under various operating conditions.

Technical Specifications

The RFU02VS8SGTR has a maximum repetitive peak reverse voltage (VRRM) of 80V. The average forward current (IF(AV)) is 200mA. The forward voltage drop (VF) is typically 0.45V at IF = 100mA. The reverse recovery time (trr) is very short, enabling high-frequency operation. The diode is available in a small SOT-23 package, facilitating surface mount assembly. The operating temperature range is typically -40°C to +125°C.