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RSD050N06TL

Part No RSD050N06TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 5A SOT428
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 8nC @ 10V
Max Input Capacitance 290pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 15W (Tc)
Maximum Rds On at Id,Vgs 109 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CPT3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1092763-RSD050N06TL
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RSD050N06TL CAD Model

Description

The Rohm Semiconductor RSD050N06TL is an N-channel MOSFET packaged in a CPT3 case with a TO-252-3, DPak (2 Leads + Tab), SC-63 dimension.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 5A @ 25°C
  • Maximum Rds On at Id,Vgs: 109 mOhm @ 5A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 290pF @ 10V
  • Power Dissipation: 15W (Tc)
  • Drive Voltage (Max Rds On): 4V
  • Drive Voltage (Min Rds On): 10V
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Operating Temperature Range: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5215 $52.1500
235+ $0.4279 $100.5565
365+ $0.4146 $151.3290
500+ $0.4012 $200.6000
645+ $0.3878 $250.1310
865+ $0.3477 $300.7605
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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