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Same model may have multiple batches, images only for reference.
RSS040P03FU6TB Real Image
Same model may have multiple batches, images only for reference.

RSS040P03FU6TB

Part No RSS040P03FU6TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4A 8SOIC
Datasheet
RSS040P03FU6TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 8nC @ 5V
Max Input Capacitance 800pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 58 mOhm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 027529-RSS040P03FU6TB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RSS040P03FU6TB CAD Model

Description

The Rohm Semiconductor RSS040P03FU6TB is a P-channel MOSFET.

  • Maximum Power Dissipation: 2W (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id,Vgs: 58 mOhm @ 4A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 8nC @ 5V
  • Input Capacitance: 800pF @ 10V
  • Supply and Demand Status: balanced

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