The RT1E040RPTR is a P-channel MOSFET manufactured by Rohm Semiconductor. It has a drain-source breakdown voltage of 30V and a continuous drain current of 4A (Ta). The device has a gate-source threshold voltage of 2.5V @ 1mA and a maximum gate charge of 20nC @ 10V. The maximum input capacitance is 1000pF @ 10V. The RT1E040RPTR has a maximum Rds On at Id, Vgs of 45 mOhm @ 4A, 10V. It is mounted on SMD (SMT) and is packaged in a reel. The device is commonly used in various applications such as power supplies, motor control, and battery management. It has a temperature range of 150°C (TJ) and is available in an 8-TSST case/package with flat lead.