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Same model may have multiple batches, images only for reference.
RT1E040RPTR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RT1E040RPTR

Part No RT1E040RPTR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4A TSST8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1000pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 550mW (Ta)
Maximum Rds On at Id,Vgs 45 mOhm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSST
Dimension 8-SMD, Flat Lead
Win Source Part Number 115949-RT1E040RPTR
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian RT1E040RPTR CAD Model

Description

The RT1E040RPTR is a P-channel MOSFET manufactured by Rohm Semiconductor.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4A (Ta)
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Input Capacitance: 1000pF @ 10V
  • Maximum Rds On @ Id, Vgs: 45 mOhm @ 4A, 10V
  • Mounting Type: SMD (SMT)
  • Package: reel
  • Temperature Range: 150°C (TJ)
  • Case/Package: 8-TSST with flat lead

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