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Same model may have multiple batches, images only for reference.
RYC002N05T316 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RYC002N05T316

Part No RYC002N05T316
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 0.9V DRIVE NCH SILICON MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 800mV @ 1mA
Max Input Capacitance 26pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 350mW (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 200mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SST3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1093149-RYC002N05T316
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RYC002N05T316 CAD Model

Description

The Rohm Semiconductor RYC002N05T316 is a MOSFET transistor.

  • Transistor Type: MOSFET
  • Popularity: Medium
  • Supply and Demand: Balanced
  • Manufacturer Homepage: www.rohm.com

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Availability: 297,000 pieces
MOQ: 690 pcs
Order Increment : 1 pcs
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