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Same model may have multiple batches, images only for reference.
RZL025P01TR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RZL025P01TR

Part No RZL025P01TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 2.5A TUMT6
Datasheet
RZL025P01TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 13nC @ 4.5V
Max Input Capacitance 1350pF @ 6V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 61 mOhm @ 2.5A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TUMT6
Dimension 6-SMD, Flat Leads
Win Source Part Number 027675-RZL025P01TR
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RZL025P01TR CAD Model

Description

The RZL025P01TR is a P-Channel MOSFET that can handle a maximum power dissipation of 1W (Ta) and a continuous drain current of 2.5A (Ta) @ 25°C.

  • Drain-Source Breakdown Voltage: 12V
  • Maximum Rds On @ Id,Vgs: 61 mOhm @ 2.5A, 4.5V
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Gate Charge: 13nC @ 4.5V
  • Maximum Input Capacitance: 1350pF @ 6V
  • Maximum Gate-Source Voltage: ±10V
  • Mounting: SMD (SMT)
  • Package: TUMT6
  • Category: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2920 $58.4000
485+ $0.2397 $116.2545
750+ $0.2322 $174.1500
1,030+ $0.2247 $231.4410
1,330+ $0.2171 $288.7430
1,780+ $0.1947 $346.5660
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