The SH8M11TB1 is a medium popularity electronic component manufactured by Rohm Semiconductor.

• Win Source Part Number: 211603-SH8M11TB1.
• Component Type: N and P-channel FET type with logic level gate feature.
• Applications: suitable for discrete semiconductor product applications.
• Package: 8-SOP.
• Form: comes in a reel - TR form.
• Maximum Power Dissipation: 2W.
• Drain-Source Breakdown Voltage: 30V.
• Continuous Drain Current: 3.5A @ 25°C.
• Gate-Source Threshold Voltage: 2.5V @ 1mA.
• Max Gate Charge: 1.9nC @ 5V.
• Max Input Capacitance: 85pF @ 10V.
• Maximum Rds On: 98 mOhm @ 3.5A, 10V.