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Same model may have multiple batches, images only for reference.
SH8M3TB1 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

SH8M3TB1

Part No SH8M3TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 5A/4.5A SOP8
Datasheet
SH8M3TB1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A, 4.5A
Maximum Rds On at Id,Vgs 51 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 3.9nC @ 5V
Max Input Capacitance 230pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1095653-SH8M3TB1
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Sensing & Instrumentation, Test & Measurement, Automation & Process Control, Robotics
Ultra Librarian 3D Model Ultra Librarian SH8M3TB1 CAD Model

Description

The SH8M3TB1 is a logic level gate N and P-channel FET from Rohm Semiconductor.

  • Package: 8-SOP
  • Mounting Type: SMD (SMT)
  • Breakdown Voltage: 30V
  • Continuous Drain Current: 5A or 4.5A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 3.9nC @ 5V
  • Maximum Rds On @ Id,Vgs: 51 mOhm @ 5A, 10V
  • Applications: Sensing & Instrumentation, Test & Measurement, Automation & Process Control, and Robotics

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Quantity Unit Price Ext. Price
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230+ $0.5090 $117.0700
355+ $0.4932 $175.0860
485+ $0.4772 $231.4420
630+ $0.4613 $290.6190
840+ $0.4136 $347.4240
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Availability: 34,800 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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