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Same model may have multiple batches, images only for reference.
UMG7NTR Real Image
Same model may have multiple batches, images only for reference.

UMG7NTR

Part No UMG7NTR
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.15W UMT5
Datasheet
UMG7NTR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 100 @ 1mA, 5V
Max Vce (sat) 300mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package UMT5
Win Source Part Number 1116401-UMG7NTR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian UMG7NTR CAD Model

Description

The Rohm Semiconductor UMG7NTR is a dual NPN pre-biased transistor with a maximum collector-emitter breakdown voltage of 50V.

  • Manufacturer: Rohm Semiconductor
  • Type: Dual NPN Pre-Biased Transistor
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Typical Gain (hFE): 100 @ 1mA, 5V
  • Frequency Transition: 250MHz
  • Case/Package: UMT5
  • Supply and Demand: Sufficient
  • Application: Discrete semiconductor products

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