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Same model may have multiple batches, images only for reference.
US5U2TR Real Image
Same model may have multiple batches, images only for reference.

US5U2TR

Part No US5U2TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 1.4A TUMT5
Datasheet
US5U2TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 2nC @ 5V
Max Input Capacitance 70pF @ 10V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 240 mOhm @ 1.4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TUMT5
Dimension 6-SMD (5 Leads), Flat Lead
Win Source Part Number 096902-US5U2TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian US5U2TR CAD Model

Description

The Rohm Semiconductor MOSFET is a N-Channel FET with a Schottky Diode feature that is isolated.

  • Power Dissipation: 1W
  • Drive Voltage: 4V and 10V
  • Temperature Range: 150°C
  • Dimension: 6-SMD (5 Leads), Flat Lead
  • Maximum Gate-Source Voltage: ±20V
  • Manufacturer: Rohm Semiconductor
  • Win Source Part Number: 096902-US5U2TR

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