The K4M51323PH-HG75 is a 256Mb Mobile DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) manufactured by Samsung. Organized as 8M x 32 bits x 4 banks, it's designed for low-power, high-performance operation, making it ideal for mobile devices and embedded systems where power consumption is a critical factor.

Applications

• Smartphones
• Tablets
• Portable media players
• Digital cameras
• Embedded systems with low power requirements

Features

• Low Power Consumption: Designed specifically for mobile applications with stringent power requirements.
• High Bandwidth: DDR technology enables fast data transfer rates, crucial for multimedia applications.
• Four Bank Architecture: Supports concurrent operations across multiple banks, improving overall efficiency.
• Operating Voltage: Operates at a low voltage (typically 1.8V or lower) to minimize power consumption.
• Package: Compact package suitable for space-constrained mobile devices.
• Data Rate: Supports data rates up to a specified speed, optimizing performance for demanding tasks.

Benefits

• Extended Battery Life: Low power design significantly extends battery life in mobile devices.
• Improved System Performance: High bandwidth allows for smooth multimedia playback and fast application loading.
• Efficient Multitasking: Four-bank architecture enables efficient multitasking and data handling.
• Compact Design: Small package size allows for integration into space-constrained mobile devices.
• Reliable Operation: Ensures stable and reliable performance in mobile environments.

Additional Details

The K4M51323PH-HG75 is designed to meet the JEDEC standards for Mobile DDR SDRAM. It includes power-saving features like deep power-down mode and partial array self-refresh (PASR) to further reduce power consumption during idle periods. This memory chip is a key component in enhancing the performance and extending the battery life of modern mobile devices, allowing users to enjoy rich multimedia experiences without frequent recharging.