The Samsung K4T1G164QE-HPE6 is a high-speed DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random-Access Memory) chip. This component is designed for applications requiring significant memory bandwidth and efficient data processing capabilities.

Applications

• Graphics Cards
• High-Performance Computing
• Gaming Consoles
• Networking Equipment
• Video Processing Systems

Features

• Density: 1Gb (Gigabit)
• Organization: 64M x 16
• Interface: DDR2 SDRAM
• Speed Grade: HPE6 (Indicates a specific speed grade; consult the datasheet for the precise clock frequency and timings)
• Operating Voltage: Typically 1.8V
• Package Type: FBGA (Fine-Pitch Ball Grid Array)
• Data Transfer Rate: High data transfer rate due to DDR2 technology

Benefits

• Increased Bandwidth: DDR2 technology doubles the data transfer rate compared to SDRAM, resulting in higher bandwidth.
• Improved Performance: Faster data access and processing contribute to overall system performance improvements.
• Reduced Power Consumption: DDR2 typically operates at a lower voltage than SDRAM, leading to reduced power consumption.
• Enhanced Stability: Designed for reliable operation even at high speeds.
• Compatibility: Compatible with systems designed for DDR2 SDRAM.

The K4T1G164QE-HPE6's 1Gb density is suitable for applications demanding substantial memory capacity. Its organization (64M x 16) allows for efficient data handling. The 'HPE6' designation identifies the speed grade, so the official Samsung datasheet must be consulted for detailed specifications, including timing diagrams, operating conditions, and PCB layout recommendations. Proper termination and decoupling are vital for stable high-speed operation. The FBGA package allows for a high pin count and improved thermal performance.