The Samsung K4T51163QQ-BCN7 is a 512 Mbit DDR2 SDRAM component. It's designed for applications requiring moderate memory capacity and high-speed data access. This memory chip is commonly found in various electronic devices that benefit from efficient and reliable memory performance.

Applications

• Graphics Cards
• Gaming Consoles
• Embedded Systems
• Networking Devices
• Set-Top Boxes

Features

• 512 Mbit (32M x 16) memory density
• DDR2 interface for high-speed data transfer
• Operating frequency up to 800 MHz
• Double data rate architecture, transferring data on both rising and falling edges of the clock
• On-chip DLL (Delay-Locked Loop) for precise timing control
• Data mask (DM) for selective write operations
• Lead-free and RoHS compliant

Benefits

• Improved system responsiveness due to fast data access
• Enhanced graphics performance in gaming and multimedia applications
• Efficient memory usage in embedded systems
• Lower power consumption compared to older DDR standards
• Compliance with environmental regulations

Technical Specifications

The K4T51163QQ-BCN7 operates at a voltage of 1.8V. It supports burst lengths of 2, 4, and 8. The chip incorporates a 16-bit prefetch architecture for high-speed data transfer. It adheres to JEDEC standards for DDR2 SDRAM and is available in a FBGA (Fine-pitch Ball Grid Array) package. The operating temperature range typically spans from 0°C to 85°C.

This DDR2 SDRAM component offers a reliable and efficient memory solution for a wide range of applications. Its high speed and relatively low power consumption make it a suitable choice for demanding applications.