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Same model may have multiple batches, images only for reference.
ECH8612-TL-E
Same model may have multiple batches, images only for reference.

ECH8612-TL-E

Part No ECH8612-TL-E
Manufacturer SANYO Semiconductor (U.S.A) Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, N CH 20V 7A ECH8; Transistor Type: MOSFET; Transistor Polarity: N; Typ Voltage Vds: 20V; Cont Current Id: 7A;...
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 7 A
Drain to Source Resistance 24 mΩ
Drain to Source Voltage (Vdss) 20 V
Number of Pins 8
Resistance 24 mΩ
RoHS Compliant
Win Source Part Number 1056768-ECH8612-TL-E
Categories Transistors - FETs, MOSFETs - RF
Manufacturer SANYO Semiconductor (U.S.A) Corporation
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian ECH8612-TL-E CAD Model

Description

The ECH8612-TL-E is a transistor MOSFET from SANYO Semiconductor (U.S.A) Corporation.

  • Vdss: It has a drain-to-source voltage (Vdss) of 20V
  • Resistance: a resistance of 24mΩ
  • Pins: and 8 pins.
  • RoHS: It is RoHS compliant
  • ID: and has a continuous drain current (ID) of 7A.
  • Drain-to-Source Resistance: The drain-to-source resistance is 24mΩ.
  • Application: The ECH8612-TL-E is ideal for use in RF transistors and FETs.

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